Chemical formula SiC, silicon carbide material has good acid and alkali resistance, high hardness, low wear and high temperature stability. It is often widely used in chemical pump shaft seals and manufacturing high-temperature and high-pressure semiconductors. It is also the main material of the third generation semiconductor wafers. .

Chemical formula B₄C, boron carbide is extremely hard and wear-resistant, and does not react with acids and bases. It is often used in military body armor, armor, fighter aircraft bulletproof sheets and nuclear energy neutron absorption.

The chemical formula is WC. Tungsten carbide has high hardness and good wear resistance. It is often used in cutting materials and military applications. It is also an effective neutron reflector.

The chemical formula is Al₂O₃, with common purity levels of 99.5% and 96%. It has excellent chemical stability, acid and alkali resistance, and single crystals of aluminum oxide can also be used as substrates for epitaxial crystals.

The chemical formula is ZrO₂, which has the best strength and toughness among ceramic materials, as well as good mechanical strength and high thermal resistance. It is particularly suitable for use in combination with metal materials and is often used in related fields such as high temperature fire resistance and insulation properties.

The chemical formula is Si₃N₄. Silicon nitride is a high-strength ceramic with low thermal expansion coefficient, good insulation and high elastic modulus. It is widely used in ball bearings and high-power automotive module substrates.

The chemical formula is AlN. Silicon nitride is a high-strength ceramic insulator. Due to its high thermal conductivity, it is often used as a chip carrier, heat dissipation module, and military purposes.

The chemical formula is BN. Boron nitride, commonly known as white graphite, is a binary compound composed of the same number of nitrogen atoms (N) and boron atoms (B). It has high heat dissipation and excellent insulation properties. It is commonly used in insulation and Heat dissipation parts are also heat shield materials in aerospace.

The chemical formula is SiO4. Quartz is a mineral formed from silicon dioxide. It is also one of the common minerals and is widely used. It is commonly used in semiconductor-related industries, electronics, chemicals, metallurgy, and national defense.

The chemical formula is C, the color is gray to black, the density is 2.09-2.23g/cm³, it is resistant to strong acid and alkali, fire-resistant, and has good electrical and thermal conductivity. It is often used in high-temperature furnaces, metal industries, optoelectronic semiconductors and other industrial fields.

The chemical formula PBN belongs to the hexagonal crystal system. The purity can reach 99.999%. It is acid and alkali resistant, anti-oxidation, has good thermal conductivity, is dense, and can be processed. It is formed by chemical vapor deposition (CVD) of ammonia and boron halides under high temperature and high vacuum conditions. It is often used in semiconductor single crystal growth (VGF, LEC) crucibles, MOCVD heaters, satellite communication microwave tubes and high temperature applications. , High vacuum equipment insulation board.

Chemical formula PG, pyrolytic graphite is a new type of carbon material. It is a pyrolytic carbon with a higher crystalline orientation deposited by chemical vapor phase on a graphite matrix at 1800°C~2000°C under a certain furnace pressure with high purity hydrocarbon gas. , it has high density (2.20g/cm3), high purity and anisotropy of thermal, electrical, magnetic and mechanical properties. It is often used in crucibles for refining high-purity metals, discharge cavities of lasers, and insulation materials for high-temperature furnaces.

Chemical Vapor Deposition (CVD) is a solid-state material chemistry technology used to grow thin films with high purity and high efficiency. It is usually used to generate thin films with specific properties and thickness on solid surfaces. This technology is often used in the semiconductor industry to grow various types of thin films. For example: Graphite is relatively unstable when used in high temperature and plasma environments. In addition to producing particles, it also easily reacts with gases to form compounds. Therefore, in the high-order semiconductor or compound semiconductor manufacturing process, a cubic-structured SiC coating is prepared on the graphite surface. The SiC film layer has high wear resistance, corrosion resistance, chemical stability and oxidation resistance, and has high thermal conductivity. This coating is favored in semiconductor-related process applications.